AR
C
HIVE INF
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RMATI
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ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF5S9150HR3 MRF5S9150HSR3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 600
μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 1500 mAdc, Measured in Functional Test)
VGS(Q)
3
4
5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3.15 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
3.1
?
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
91.5
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 33 W Avg. N-CDMA,
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
18.5
19.7
21.5
dB
Drain Efficiency
ηD
26.5
28.4
?
%
Adjacent Channel Power Ratio
ACPR
?
-46.8
-45
dBc
Input Return Loss
IRL
?
-20
-9
dB
1. Part internally input matched.
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